View AUIRFR4104TRR_8835545.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

auirfr4104auirfu4104 hexfet ? power mosfet www.irf.com 1 automotive grade features advanced process technology ultra low on-resistance 175c operating temperature fast switching repetitive avalanche allowed up to tjmax lead-free, rohs compliant automotive qualified * descriptionspecifically designed for automotive applications, this hexfet ? power mosfet utilizes the latest processing techniques to achieve extremely low on-resistance persilicon area. additional features of this design are a 175c junction operating temperature, fast switching speed and improved repetitive avalanche rating . these features combine to make this design an extremely efficient and reliable device for use in automotive appli- cations and a wide variety of other applications. hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ v (br)dss 40v r ds(on) max. 5.5m ? i d (silicon limited) 119a i d (package limited) 42a s d g gds gate drain source d-pak auirfr4104 i-pak auirfu4104 absolute maximum ratingsstresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. parameter units i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 100c continuous drain current, v gs @ 10v a i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) i dm pulsed drain current p d @t c = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited) mj e as (tested ) single pulse avalanche energy tested value i ar avalanche current a e ar repetitive avalanche energy mj t j operating junction and t stg storage temperature range c soldering temperature, for 10 seconds (1.6mm from case ) mounting torque, 6-32 or m3 screw thermal resistance parameter typ. max. units r jc junction-to-case CCC 1.05 r ja junction-to-ambient (pcb mount) CCC 40 c/w r ja junction-to-ambient CCC 110 310 145 see fig.12a, 12b, 15, 16 140 0.95 20 max. 119 84 480 42 -55 to + 175 300 10 lbf in (1.1n m) pd - 97452a downloaded from: http:///
2 www.irf.com static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. t y p. max. units v (br)dss drain-to-source breakdown volta g e4 0C C CC C Cv ? v (br)dss / ? t j breakdown volta g e temp. coefficient CCC 0.032 CCC v/c r ds(on) static drain-to-source on-resistance CCC 4.3 5.5 m ? v gs(th) gate threshold volta g e 2.0 CCC 4.0 v g fs forward transconductance 58 CCC CCC s i dss drain-to-source leaka g e current CCC CCC 20 a CCC CCC 250 i gss gate-to-source forward leaka g e CCC CCC 200 na gate-to-source reverse leaka g e CCC CCC -200 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. t y p. max. units q g total gate char g e CCC 59 89 q gs gate-to-source char g e CCC 19 CCC nc q gd gate-to-drain ("miller") char g e CCC 24 CCC t d(on) turn-on dela y time CCC17CCC t r rise time CCC69CCC t d(off) turn-off dela y time CCC37CCCns t f fall time CCC36CCC l d internal drain inductance CCC 4.5 CCC between lead, nh 6mm (0.25in.) l s internal source inductance CCC 7.5 CCC from packa g e and center of die contact c iss input capacitance CCC 2950 CCC c oss output capacitance CCC 660 CCC c rss reverse transfer capacitance CCC 370 CCC pf c oss output capacitance CCC 2130 CCC c oss output capacitance CCC 590 CCC c oss eff. effective output capacitance CCC 850 CCC diode characteristics parameter min. t y p. max. units i s continuous source current CCC CCC 42 (body diode) a i sm pulsed source current CCC CCC 480 (body diode) v sd diode forward volta g e CCC CCC 1.3 v t rr reverse recover y time CCC 28 42 ns q rr reverse recover y char g e CCC 24 36 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld ) v ds = 10v, i d = 42a i d = 42a v ds = 32v conditions v gs = 10v v gs = 0v v ds = 25v ? = 1.0mhz v gs = 20v v gs = -20v mosfet symbol showing the integral reverse p-n junction diode. t j = 25c, i s = 42a, v gs = 0v t j = 25c, i f = 42a, v dd = 20v di/dt = 100a/ s conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 42a v ds = v gs , i d = 250a v ds = 40v, v gs = 0v v ds = 40v, v gs = 0v, t j = 125c conditions v gs = 0v, v ds = 1.0v, ? = 1.0mhz v gs = 0v, v ds = 32v, ? = 1.0mhz v gs = 0v, v ds = 0v to 32v v gs = 10v v dd = 20v i d = 42a r g = 6.8 ? downloaded from: http:///
www.irf.com 3

!"!#

#

qualification information ? d-pak msl1 i-pak msl1 rohs compliant yes esd machine model class m4 (425v) aec-q101-002 human body model class h1c (1750v) aec-q101-001 charged device model class c3 (625v) aec-q101-005 moisture sensitivity level qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. irs industrial and consumer qualification level is granted by extension of the higher automotive level. downloaded from: http:///
4 www.irf.com fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. typical forward transconductance vs. drain current 0 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 25c 4.5v

0 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 175c 4.5v

4 6 8 10 v gs , gate-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) v ds = 20v 60s pulse width t j = 25c t j = 175c 0 2 04 06 08 01 0 0 i d, drain-to-source current (a) 0 20 40 60 80 100 120 g f s , f o r w a r d t r a n s c o n d u c t a n c e ( s ) t j = 25c t j = 175c v ds = 10v 380s pulse width downloaded from: http:///
www.irf.com 5 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0.0 0.5 1.0 1.5 2.0 v sd , source-todrain voltage (v) 0.1 1.0 10.0 100.0 1000.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 1 10 100 v ds , drain-to-source voltage (v) 0 1000 2000 3000 4000 5000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 2 04 06 08 01 0 0 q g total gate charge (nc) 0 4 8 12 16 20 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 32v vds= 20v i d = 42a 0 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec downloaded from: http:///
6 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10. normalized on-resistance vs. temperature 25 50 75 100 125 150 175 t c , case temperature (c) 0 20 40 60 80 100 120 i d , d r a i n c u r r e n t ( a ) limited by package -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 42a v gs = 10v 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.5067 0.0004140.5428 0.004081 j j 1 1 2 2 r 1 r 1 r 2 r 2 c ci i / ri ci= i / ri downloaded from: http:///
www.irf.com 7 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - !"$ fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 14. threshold voltage vs. temperature r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 500 600 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 9.2a 13a bottom 42a -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 2.0 3.0 4.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a downloaded from: http:///
8 www.irf.com fig 15. typical avalanche current vs.pulsewidth fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16:(for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type.2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 12a, 12b. 4. p d (ave) = average power dissipation per single avalanche pulse.5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav assuming ? tj = 25c due to avalanche losses. note: in no case should tj be allowed to exceed tjmax 0.01 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 40 80 120 160 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1% duty cycle i d = 42a downloaded from: http:///
www.irf.com 9 fig 17. %&' ()(
*

for n-channel hexfet power mosfets ? ! ? " ? #$! %& p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period +

+ + - + + + - - - '' ? ()""*+ ? '(&,'- ? ! ""*'./'/ ? '-0'(- v ds 90%10% v gs t d(on) t r t d(off) t f ' "12 1 3 '. 0.1 % ' + - '' fig 18a. switching time test circuit fig 18b. switching time waveforms downloaded from: http:///
10 www.irf.com

d-pak part marking information '
,-, ..-.&.& -

( %
/ 01 0
downloaded from: http:///
www.irf.com 11

'
,-, ..-.&.& -

( %
/ 01 0
i-pak part marking information

downloaded from: http:///
12 www.irf.com

! "#

tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch repetitive rating; pulse width limited bymax. junction temperature. (see fig. 11). limited by t jmax , starting t j = 25c, l = 0.16mh r g = 25 ? , i as = 42a, v gs =10v. part not recommended for use above this value. pulse width 1.0ms; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss .
limited by t jmax , see fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. this value determined from sample failure population, startingt j = 25c, l = 0.16mh, r g = 25 ? , i as = 42a, v gs =10v. when mounted on 1" square pcb (fr-4 or g-10 material) .for recommended footprint and soldering techniques refer to application note #an-994. r is measured at tj approximately 90c. downloaded from: http:///
www.irf.com 13 ordering information base part number package type standard pack complete part number form quantit y auirfr4104 d p ak tube 75 auirfr4104 ta p e and reel 2000 auirfr4104tr ta p e and reel left 3000 auirfr4104trl ta p e and reel ri g ht 3000 AUIRFR4104TRR auirfu4104 i p ak tube 75 auirfu4104 downloaded from: http:///
14 www.irf.com
unless specifically designated for the automotive market, international rectifier corporation and itssubsidiaries (ir) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. part numbers designated with the au prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. all products are sold subject to irs terms and conditions of sale supplied at the time of order acknowledgment. ir warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with irs standard warranty. testing and other quality control techniques are used to the extent ir deems necessary to support this warranty. except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. ir assumes no liability for applications assistance or customer product design. customers are responsible for their products and applications using ir components. to minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. reproduc- tion of this information with alterations is an unfair and deceptive business practice. ir is not responsible or liable for such altered documentation. information of third parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or service voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive business practice. ir is not responsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the ir product could create a situation where personal injury or death may occur. should buyer purchase or use ir products for any such unintended or unauthorized application, buyer shall indemnify and hold international rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ir was negligent regarding the design or manufacture of the product. ir products are neither designed nor intended for use in military/aerospace applications or environments unless the ir products are specifically designated by ir as military-grade or enhanced plastic. only products designated by ir as military-grade meet military specifications. buyers acknowledge and agree that any such use of ir products which ir has not designated as military-grade is solely at the buyers risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. ir products are neither designed nor intended for use in automotive applications or environments unless the specific ir products are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designation au. buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements. for technical support, please contact irs technical assistance center http://www.irf.com/technical-info/ world headquarters: 233 kansas st., el segundo, california 90245 tel: (310) 252-7105 downloaded from: http:///

▲Up To Search▲

Price & Availability of AUIRFR4104TRR

	To Download AUIRFR4104TRR Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .